مؤتمر
Interface states as an active component for 20 nm gate-length planar MOSFET with electrostatic channel extension (ESCE)
| العنوان: | Interface states as an active component for 20 nm gate-length planar MOSFET with electrostatic channel extension (ESCE) |
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| المؤلفون: | Buh, G.H., Park, T., Yon, G.H., Kim, D.C., Koo, B.Y., Ryoo, C.W., Hong, S.J., Yoo, J.R., Lee, J.W., Shin, Y.G., U-In Chung, Moon, J.T., Byung-Il Ryu |
| المصدر: | IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :832-835 2005 |
| Relation: | International Electron Devices Meeting 2005 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 078039268X 9780780392687 |
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| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2005.1609485 |