مؤتمر
Demonstration of recessed SiGe S/D and inserted metal gate on HfO/sub 2/ for high performance pFETs.
| العنوان: | Demonstration of recessed SiGe S/D and inserted metal gate on HfO/sub 2/ for high performance pFETs. |
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| المؤلفون: | Verheyen, P., Eneman, G., Rooyackers, R., Loo, R., Eeckhout, L., Rondas, D., Leys, F., Snow, J., Shamiryan, D., Demand, M., Hoffman, Th.Y., Goodwin, M., Fujimoto, H., Ravit, C., Lee, B-C., Caymax, M., De Meyer, K., Absil, P., Jurczak, M., Biesemans, S. |
| المصدر: | IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :886-889 2005 |
| Relation: | International Electron Devices Meeting 2005 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 078039268X 9780780392687 |
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| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2005.1609500 |