دورية أكاديمية
Highly manufacturable advanced gate-stack technology for sub-45-nm self-aligned gate-first CMOSFETs
| العنوان: | Highly manufacturable advanced gate-stack technology for sub-45-nm self-aligned gate-first CMOSFETs |
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| المؤلفون: | Seung-Chul Song, Zhibo Zhang, Huffman, C., Sim, J.H., Sang Ho Bae, Kirsch, P.D., Majhi, P., Rino Choi, Moumen, N., Byoung Hun Lee |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 53(5):979-989 May, 2006 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2006.872700 |