Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode

التفاصيل البيبلوغرافية
العنوان: Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode
المؤلفون: Dae-Hwan Kang, In Ho Kim, Jeung-hyun Jeong, Byung-ki Cheong, Dong-Ho Ahn, Ki-Bum Kim
المصدر: 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st. :90-91 2006
Relation: 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:1424400279
9781424400270
تدمد:2159483X
21594864
DOI:10.1109/.2006.1629508