Self-Gating in Nanoelectronic Junctions

التفاصيل البيبلوغرافية
العنوان: Self-Gating in Nanoelectronic Junctions
المؤلفون: Worschech, L., Hartmann, D., Reitzenstein, S., Forchel, A.
المصدر: 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings Indium Phosphide and Related Materials Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on. :431-435 2006
Relation: 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780395581
9780780395589
تدمد:10928669
DOI:10.1109/ICIPRM.2006.1634209