InGaP PHEMT with a Liquid Phase Oxidized InGaP as Gate Dielectric

التفاصيل البيبلوغرافية
العنوان: InGaP PHEMT with a Liquid Phase Oxidized InGaP as Gate Dielectric
المؤلفون: Kuan-Wei Lee, Po-Wen Sze, Kai-Lin Lee, Mau-Phon Houng, Yeong-Her Wang
المصدر: 2005 IEEE Conference on Electron Devices and Solid-State Circuits Electron Devices and Solid-State Circuits, 2005 IEEE Conference on. :609-612 2005
Relation: 2005 IEEE Conference on Electron Devices and Solid-State Circuits
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780393392
9780780393394
DOI:10.1109/EDSSC.2005.1635347