مؤتمر
Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth
| العنوان: | Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth |
|---|---|
| المؤلفون: | Wiegner, D., Merk, T., Seyfried, U., Tempi, W., Merk, S., Quay, R., van Raay, F., Walcher, H., Massler, H., Seelmann-Eggebert, M., Reiner, R., Moritz, R., Kiefer, R. |
| المصدر: | European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005 Gallium Arsenide and other Compound Semiconductors Application Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European. :641-644 2005 |
| Relation: | 2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 8890201207 9788890201202 |
|---|---|
| DOI: | 10.1109/EUMC.2005.1610257 |