مؤتمر
Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy
العنوان: | Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy |
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المؤلفون: | Daliento, S., Mele, L., Spirito, P., Gialanella, L., Romano, M., Limata, B.N., Carta, R., Bellemo, L. |
المصدر: | 2006 IEEE International Symposium on Power Semiconductor Devices and IC's Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on. :1-4 2006 |
Relation: | 2006 IEEE International Symposium on Power Semiconductor Devices and IC's (ISPSD) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780397142 9780780397149 |
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تدمد: | 10636854 19460201 |
DOI: | 10.1109/ISPSD.2006.1666094 |