Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy

التفاصيل البيبلوغرافية
العنوان: Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy
المؤلفون: Daliento, S., Mele, L., Spirito, P., Gialanella, L., Romano, M., Limata, B.N., Carta, R., Bellemo, L.
المصدر: 2006 IEEE International Symposium on Power Semiconductor Devices and IC's Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on. :1-4 2006
Relation: 2006 IEEE International Symposium on Power Semiconductor Devices and IC's (ISPSD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780397142
9780780397149
تدمد:10636854
19460201
DOI:10.1109/ISPSD.2006.1666094