مؤتمر
Influence of Layout Geometries on the Behavior of 4H-SiC 600V Merged PiN Schottky (MPS) Rectifiers
| العنوان: | Influence of Layout Geometries on the Behavior of 4H-SiC 600V Merged PiN Schottky (MPS) Rectifiers |
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| المؤلفون: | d'Alessandro, V., Irace, A., Breglio, G., Spirito, P., Bricconi, A., Carta, R., Raffo, D., Merlin, L. |
| المصدر: | 2006 IEEE International Symposium on Power Semiconductor Devices and IC's Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on. :1-4 2006 |
| Relation: | 2006 IEEE International Symposium on Power Semiconductor Devices and IC's (ISPSD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780397142 9780780397149 |
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| تدمد: | 10636854 19460201 |
| DOI: | 10.1109/ISPSD.2006.1666097 |