Wide Voltage Power Device implementation in O.25 μm SOI BiC-DMOS

التفاصيل البيبلوغرافية
العنوان: Wide Voltage Power Device implementation in O.25 μm SOI BiC-DMOS
المؤلفون: Nitta, T., Yanagi, S., Miyajima, T., Furuya, K., Otsu, Y., Onoda, H., Hatasako, K.
المصدر: 2006 IEEE International Symposium on Power Semiconductor Devices and IC's Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on. :1-4 2006
Relation: 2006 IEEE International Symposium on Power Semiconductor Devices and IC's (ISPSD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780397142
9780780397149
تدمد:10636854
19460201
DOI:10.1109/ISPSD.2006.1666141