Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond

التفاصيل البيبلوغرافية
العنوان: Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond
المؤلفون: Lu, J.P., Miles, D.S., DeLoach, J., Yue, D.F., Chen, P.J., Bonifield, T., Crank, S., Yu, S.F., Mehrad, F., Obeng, Y., Ramappa, D.A., Corum, D., Guldi, R.L., Robertson, L.S., Liu, X., Hall, L.H., Xu, Y.Q., Lin, B.Y., Griffin, A.J., Johnson, F.S., Grider, T., Mercer, D., Montgomery, C.
المصدر: 2006 International Workshop on Junction Technology Junction Technology, 2006. IWJT '06. International Workshop on. :127-133 2006
Relation: 2006 International Workshop on Junction Technology
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:1424400473
9781424400478
DOI:10.1109/IWJT.2006.220877