مؤتمر
Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond
العنوان: | Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond |
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المؤلفون: | Lu, J.P., Miles, D.S., DeLoach, J., Yue, D.F., Chen, P.J., Bonifield, T., Crank, S., Yu, S.F., Mehrad, F., Obeng, Y., Ramappa, D.A., Corum, D., Guldi, R.L., Robertson, L.S., Liu, X., Hall, L.H., Xu, Y.Q., Lin, B.Y., Griffin, A.J., Johnson, F.S., Grider, T., Mercer, D., Montgomery, C. |
المصدر: | 2006 International Workshop on Junction Technology Junction Technology, 2006. IWJT '06. International Workshop on. :127-133 2006 |
Relation: | 2006 International Workshop on Junction Technology |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 1424400473 9781424400478 |
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DOI: | 10.1109/IWJT.2006.220877 |