Extraction of carrier transport and electronic parameters of submicrometer gate-length MODFET's on InP and GaAs substrates

التفاصيل البيبلوغرافية
العنوان: Extraction of carrier transport and electronic parameters of submicrometer gate-length MODFET's on InP and GaAs substrates
المؤلفون: Fu, S.-T., Das, M.B.
المصدر: [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in. :170-179 1991
Relation: Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780304918
9780780304918
DOI:10.1109/CORNEL.1991.170046