مؤتمر
18.3 Superior Current Enhancement in SiGe Channel p-MOSFETs Fabricated on [110] Surface
| العنوان: | 18.3 Superior Current Enhancement in SiGe Channel p-MOSFETs Fabricated on [110] Surface |
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| المؤلفون: | Liu, P.W., Pan, J., Chang, T., Tsai, T.L., Chen, T., Liu, Y.C., Tsai, C.H., Lan, B., Lin, Y., Chiang, W., Tsai, C.T. |
| المصدر: | 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on. :148-149 2006 |
| Relation: | 2006 Symposium on VLSI Technology |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 1424400058 9781424400058 |
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| تدمد: | 07431562 21589682 |
| DOI: | 10.1109/VLSIT.2006.1705260 |