Influence of Dopant Concentration on the Electrical Transport at Low Temperature in Silicon Nanowires

التفاصيل البيبلوغرافية
العنوان: Influence of Dopant Concentration on the Electrical Transport at Low Temperature in Silicon Nanowires
المؤلفون: Ionica, I., Montes, L., Zimmermann, J., Saminadayar, L., Bouchiat, V.
المصدر: 2006 Sixth IEEE Conference on Nanotechnology Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on. 2:425-428 2006
Relation: 2006 Sixth IEEE Conference on Nanotechnology
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:1424400775
9781424400775
تدمد:19449399
DOI:10.1109/NANO.2006.247678