دورية أكاديمية
Process and device characterization for a 30-GHz f/sub T/ submicrometer double poly-Si bipolar technology using BF/sub 2/-implanted base with rapid thermal process
العنوان: | Process and device characterization for a 30-GHz f/sub T/ submicrometer double poly-Si bipolar technology using BF/sub 2/-implanted base with rapid thermal process |
---|---|
المؤلفون: | Yamaguchi, T., Uppili, S., Lee, J.S., Kawamoto, G.H., Dosluoglu, T., Simpkins, S. |
المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 40(8):1484-1495 Aug, 1993 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 00189383 15579646 |
---|---|
DOI: | 10.1109/16.223709 |