دورية أكاديمية

Process and device characterization for a 30-GHz f/sub T/ submicrometer double poly-Si bipolar technology using BF/sub 2/-implanted base with rapid thermal process

التفاصيل البيبلوغرافية
العنوان: Process and device characterization for a 30-GHz f/sub T/ submicrometer double poly-Si bipolar technology using BF/sub 2/-implanted base with rapid thermal process
المؤلفون: Yamaguchi, T., Uppili, S., Lee, J.S., Kawamoto, G.H., Dosluoglu, T., Simpkins, S.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 40(8):1484-1495 Aug, 1993
قاعدة البيانات: IEEE Xplore Digital Library