دورية أكاديمية
Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application
| العنوان: | Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application |
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| المؤلفون: | Ren, F., Abernathy, C.R., Pearton, S.J., Lothian, J.R., Wisk, P.W., Fullowan, T.R., Chen, Y.-K., Yang, L.W., Fu, S.T., Brozovich, R.S., Lin, H.H. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 14(7):332-334 Jul, 1993 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/55.225563 |