Accurate and efficient two-dimensional modeling of boron implantation into single-crystal silicon

التفاصيل البيبلوغرافية
العنوان: Accurate and efficient two-dimensional modeling of boron implantation into single-crystal silicon
المؤلفون: Klein, K.M., Park, C., Yang, S.-H., Tasch, A.F.
المصدر: International Electron Devices Meeting 1991 [Technical Digest] Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International. :697-700 1991
Relation: 1991 International Electron Devices Meeting
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780302435
9780780302433
تدمد:01631918
DOI:10.1109/IEDM.1991.235327