A high current power IC technology using trench DMOS power device

التفاصيل البيبلوغرافية
العنوان: A high current power IC technology using trench DMOS power device
المؤلفون: Mukherjee, S., Kim, M., Tsou, L., Wong, S., Young, J.C.
المصدر: International Electron Devices Meeting 1991 [Technical Digest] Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International. :145-148 1991
Relation: 1991 International Electron Devices Meeting
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780302435
9780780302433
تدمد:01631918
DOI:10.1109/IEDM.1991.235480