مؤتمر
Monte Carlo simulation of ion implantation into single-crystal silicon including new models for electronic stopping and cumulative damage
| العنوان: | Monte Carlo simulation of ion implantation into single-crystal silicon including new models for electronic stopping and cumulative damage |
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| المؤلفون: | Klein, K.M., Park, C., Tasch, A.F. |
| المصدر: | International Technical Digest on Electron Devices Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International. :745-748 1990 |
| Relation: | International Technical Digest on Electron Devices |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 01631918 |
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| DOI: | 10.1109/IEDM.1990.237093 |