مؤتمر
Assessment of electro-static discharge robustness based on the monitoring of lattice temperature of silicon
العنوان: | Assessment of electro-static discharge robustness based on the monitoring of lattice temperature of silicon |
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المؤلفون: | Yoo, K.D., Lim, G.H., Jin, J.H., Choi, K.H. |
المصدر: | Proceedings of 1994 IEEE International Conference on Microelectronic Test Structures Microelectronic test structures Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on. :208-213 1994 |
Relation: | Proceedings of 1994 IEEE International Conference on Microelectronic Test Structures |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780317572 9780780317574 |
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DOI: | 10.1109/ICMTS.1994.303474 |