Assessment of electro-static discharge robustness based on the monitoring of lattice temperature of silicon

التفاصيل البيبلوغرافية
العنوان: Assessment of electro-static discharge robustness based on the monitoring of lattice temperature of silicon
المؤلفون: Yoo, K.D., Lim, G.H., Jin, J.H., Choi, K.H.
المصدر: Proceedings of 1994 IEEE International Conference on Microelectronic Test Structures Microelectronic test structures Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on. :208-213 1994
Relation: Proceedings of 1994 IEEE International Conference on Microelectronic Test Structures
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780317572
9780780317574
DOI:10.1109/ICMTS.1994.303474