مؤتمر
A high performance epitaxial SiGe-base ECL BiCMOS technology
| العنوان: | A high performance epitaxial SiGe-base ECL BiCMOS technology |
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| المؤلفون: | Harame, D.L., Crabbe, E.F., Cressler, J.D., Comfort, J.H., Sun, J.Y.-C., Stiffler, S.R., Kobeda, E., Burghartz, J.N., Gilbert, M.M., Malinowski, J.C., Dally, A.J., Ratanaphanyarat, S., Saccamango, M.J., Rausch, W., Cotte, J., Chu, C., Stork, J.M.C. |
| المصدر: | 1992 International Technical Digest on Electron Devices Meeting Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International. :19-22 1992 |
| Relation: | Proceedings of IEEE International Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780308174 9780780308176 |
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| تدمد: | 01631918 |
| DOI: | 10.1109/IEDM.1992.307299 |