مؤتمر
A high performance epitaxial SiGe-base ECL BiCMOS technology
العنوان: | A high performance epitaxial SiGe-base ECL BiCMOS technology |
---|---|
المؤلفون: | Harame, D.L., Crabbe, E.F., Cressler, J.D., Comfort, J.H., Sun, J.Y.-C., Stiffler, S.R., Kobeda, E., Burghartz, J.N., Gilbert, M.M., Malinowski, J.C., Dally, A.J., Ratanaphanyarat, S., Saccamango, M.J., Rausch, W., Cotte, J., Chu, C., Stork, J.M.C. |
المصدر: | 1992 International Technical Digest on Electron Devices Meeting Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International. :19-22 1992 |
Relation: | Proceedings of IEEE International Electron Devices Meeting |
قاعدة البيانات: | IEEE Xplore Digital Library |
كن أول من يترك تعليقا!