مؤتمر
Characterization of hot-carrier-induced degradation in p-channel MOSFETs by total injected charge techniques
| العنوان: | Characterization of hot-carrier-induced degradation in p-channel MOSFETs by total injected charge techniques |
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| المؤلفون: | Di-Hui Huang, King, E.E., Palkuti, L.J. |
| المصدر: | Proceedings of 1994 IEEE International Reliability Physics Symposium Reliability physics Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International. :34-41 1994 |
| Relation: | Proceedings of 1994 IEEE International Reliability Physics Symposium |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780313577 9780780313576 |
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| DOI: | 10.1109/RELPHY.1994.307860 |