Characterization of hot-carrier-induced degradation in p-channel MOSFETs by total injected charge techniques

التفاصيل البيبلوغرافية
العنوان:	Characterization of hot-carrier-induced degradation in p-channel MOSFETs by total injected charge techniques
المؤلفون:	Di-Hui Huang, King, E.E., Palkuti, L.J.
المصدر:	Proceedings of 1994 IEEE International Reliability Physics Symposium Reliability physics Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International. :34-41 1994
Relation:	Proceedings of 1994 IEEE International Reliability Physics Symposium
قاعدة البيانات:	IEEE Xplore Digital Library

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