High speed InGaP emitter HBTs fabricated with ECR dry etch technique

التفاصيل البيبلوغرافية
العنوان: High speed InGaP emitter HBTs fabricated with ECR dry etch technique
المؤلفون: Yang, L.W., Brozovich, R.S., Ren, F., Abernathy, C.R., Pearton, S.J., Lothian, J.R., Shu Mercer, B., Spencer, J.E.
المصدر: Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Indium phosphide and related materials Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on. :563-566 1994
Relation: Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:078031476X
9780780314764
DOI:10.1109/ICIPRM.1994.328294