دورية أكاديمية
Device parameter changes caused by manufacturing fluctuations of deep submicron MOSFET's
| العنوان: | Device parameter changes caused by manufacturing fluctuations of deep submicron MOSFET's |
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| المؤلفون: | Sitte, R., Dimitrijev, S., Harrison, H.B. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 41(11):2210-2215 Nov, 1994 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/16.333843 |