مؤتمر
A 0.6 /spl mu/m/sup 2/ 256 Mb trench DRAM cell with self-aligned BuriEd STrap (BEST)
| العنوان: | A 0.6 /spl mu/m/sup 2/ 256 Mb trench DRAM cell with self-aligned BuriEd STrap (BEST) |
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| المؤلفون: | Nesbit, L., Alsmeier, J., Chen, B., DeBrosse, J., Faheyk, P., Gall, M., Gambino, J., Gernhard, S., Ishiuchi, H., Kleinhenz, R., Mandelman, J., Mii, T., Morikado, M., Nitayama, A., Parke, S., Wong, H., Bronner, G. |
| المصدر: | Proceedings of IEEE International Electron Devices Meeting Electron devices Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International. :627-630 1993 |
| Relation: | Proceedings of IEEE International Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780314506 9780780314504 |
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| تدمد: | 01631918 |
| DOI: | 10.1109/IEDM.1993.347282 |