مؤتمر
A boron-retarding and high interface quality thin gate dielectric for deep-submicron devices
| العنوان: | A boron-retarding and high interface quality thin gate dielectric for deep-submicron devices |
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| المؤلفون: | Manchanda, L., Weber, G.R., Mansfields, W., Boulin, D.M., Krisch, K., Kim, Y.O., Storz, R., Moriya, N., Luftman, H.S., Feldman, L.C., Green, M.L., Kistler, R.C., Lee, J.T.C., Klemens, F. |
| المصدر: | Proceedings of IEEE International Electron Devices Meeting Electron devices Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International. :459-462 1993 |
| Relation: | Proceedings of IEEE International Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780314506 9780780314504 |
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| تدمد: | 01631918 |
| DOI: | 10.1109/IEDM.1993.347311 |