مؤتمر
A highly practical modified LOCOS isolation technology for the 256 Mbit DRAM
العنوان: | A highly practical modified LOCOS isolation technology for the 256 Mbit DRAM |
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المؤلفون: | Ahn, D.H., Ahn, S.J., Griffin, P.B., Hwang, M.W., Lee, W.S., Ahn, S.T., Hwang, C.G., Lee, M.Y. |
المصدر: | Proceedings of 1994 IEEE International Electron Devices Meeting Electron devices Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International. :679-682 1994 |
Relation: | Proceedings of 1994 IEEE International Electron Devices Meeting |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780321111 9780780321113 |
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تدمد: | 01631918 |
DOI: | 10.1109/IEDM.1994.383321 |