A highly practical modified LOCOS isolation technology for the 256 Mbit DRAM

التفاصيل البيبلوغرافية
العنوان: A highly practical modified LOCOS isolation technology for the 256 Mbit DRAM
المؤلفون: Ahn, D.H., Ahn, S.J., Griffin, P.B., Hwang, M.W., Lee, W.S., Ahn, S.T., Hwang, C.G., Lee, M.Y.
المصدر: Proceedings of 1994 IEEE International Electron Devices Meeting Electron devices Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International. :679-682 1994
Relation: Proceedings of 1994 IEEE International Electron Devices Meeting
قاعدة البيانات: IEEE Xplore Digital Library