مؤتمر
Investigation of Hot Carrier Degradation Modes in LDMOS by using a Novel Three-Region Charge Pumping Technique
| العنوان: | Investigation of Hot Carrier Degradation Modes in LDMOS by using a Novel Three-Region Charge Pumping Technique |
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| المؤلفون: | Cheng, C.C., Tu, K.C., Wang, T., Hsieh, T.H., Tzeng, J.T., Jong, Y.C., Liou, R.S., Pan, S.C., Hsu, S.L. |
| المصدر: | 2006 IEEE International Reliability Physics Symposium Proceedings Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International. :334-337 Mar, 2006 |
| Relation: | 2006 IEEE International Reliability Physics Symposium Proceedings |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780394984 9780780394988 0780394992 9780780394995 |
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| تدمد: | 15417026 19381891 |
| DOI: | 10.1109/RELPHY.2006.251239 |