Depletion-Mode MOSFET on n-GaAs substrate with HfO2 and Silicon Interface Passivation

التفاصيل البيبلوغرافية
العنوان: Depletion-Mode MOSFET on n-GaAs substrate with HfO2 and Silicon Interface Passivation
المؤلفون: InJo Ok, Kim, H., Zhang, M., Lee, T., Zhu, F., Thareja, G., Yu, L., Koveshnikov, S., Tsai, W., Tokranov, V., Yakimov, M., Oktyabrsky, S., Lee, J.C.
المصدر: 2006 64th Device Research Conference Device Research Conference, 2006 64th. :45-46 Jun, 2006
Relation: 2006 64th Device Research Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780397487
9780780397484
0780397495
9780780397491
تدمد:15483770
DOI:10.1109/DRC.2006.305112