Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM

التفاصيل البيبلوغرافية
العنوان: Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM
المؤلفون: Prezioso, M., Gombia, E., Mosca, R., Nasi, L., Motta, A., Frigeri, P., Trevisi, G., Seravalli, L., Franchi, S.
المصدر: 2006 International Conference on Advanced Semiconductor Devices and Microsystems Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on. :237-240 Oct, 2006
Relation: 2006 International Conference on Advanced Semiconductor Devices and Microsystems
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781509093960
DOI:10.1109/ASDAM.2006.331197