Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance

التفاصيل البيبلوغرافية
العنوان:	Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance
المؤلفون:	Singh, N., Lim, F. Y., Fang, W. W., Rustagi, S. C., Bera, L. K., Agarwal, A., Tung, C. H., Hoe, K. M., Omampuliyur, S. R., Tripathi, D., Adeyeye, A. O., Lo, G. Q., Balasubramanian, N., Kwong, D. L.
المصدر:	2006 International Electron Devices Meeting Electron Devices Meeting, 2006. IEDM '06. International. :1-4 Dec, 2006
Relation:	2006 International Electron Devices Meeting
قاعدة البيانات:	IEEE Xplore Digital Library