التفاصيل البيبلوغرافية
| العنوان: |
High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography |
| المؤلفون: |
Agnello, P., Ivers, T., Warm, C., Wise, R., Wachnik, R., Schepis, D., Sankaran, S., Norum, J., Luning, S., Li, Y., Khare, M., Grill, A., Edelstein, D., Chen, X., Brown, D., Augur, R., Wu, S., Yu, J., Wong, R.C., Werking, J., Wehella-Gamage, D., Vayshenker, A., Van Meer, H., Van Den Nieuwenhuizen, R., Tian, C., Tabakman, K., Sung, C.Y., Standaert, T., Simon, A., Sim, J., Sheraw, C., Restaino, D., Rausch, W., Pal, R., Prindle, C., Ouyang, X., Ouyang, C., Ontalus, V., Nummy, K., Nielsen, D., Nicholson, L., McKnight, A., Lustig, N., Liu, X., Lee, M.H., Lea, D., Larosa, G., Landers, W., Kim, B., Kelling, M., Jeng, S.-J., Holt, J., Hargrove, M., Grunow, S., Greco, S., Gates, S., Frye, A., Fisher, P., Domenicucci, A., Dimitrakopoulos, C., Costrini, G., Chou, A., Cheng, J., Butt, S., Black, L., Belyansky, M., Ahsan, I., Adam, T., Gabor, A., Wu, C.-H.J., Yang, D., Crouse, M., Robinson, C., Corliss, D., Fonseca, C., Johnson, J., Weybright, M., Waite, A., Nayfeh, H.M., Onishi, K., Narasimha, S. |
| المصدر: |
2006 International Electron Devices Meeting Electron Devices Meeting, 2006. IEDM '06. International. :1-4 Dec, 2006 |
| Relation: |
2006 International Electron Devices Meeting |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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