دورية أكاديمية
Investigation and Localization of the SiGe Source/Drain (S/D) Strain-Induced Defects in PMOSFET With 45-nm CMOS Technology
| العنوان: | Investigation and Localization of the SiGe Source/Drain (S/D) Strain-Induced Defects in PMOSFET With 45-nm CMOS Technology |
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| المؤلفون: | Cheng, C. Y., Fang, Y. K., Hsieh, J. C., Hsia, H., Sheu, Y. M., Lu, W. T., Chen, W. M., Lin, S. S. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 28(5):408-411 May, 2007 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2007.895446 |