دورية أكاديمية
Shallow Trench Isolation for the 45-nm CMOS Node and Geometry Dependence of STI Stress on CMOS Device Performance
| العنوان: | Shallow Trench Isolation for the 45-nm CMOS Node and Geometry Dependence of STI Stress on CMOS Device Performance |
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| المؤلفون: | Tilke, A. T., Stapelmann, C., Eller, M., Bach, K.-H., Hampp, R., Lindsay, R., Conti, R., Wille, W., Jaiswal, R., Galiano, M., Jain, A. |
| المصدر: | IEEE Transactions on Semiconductor Manufacturing IEEE Trans. Semicond. Manufact. Semiconductor Manufacturing, IEEE Transactions on. 20(2):59-67 May, 2007 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 08946507 15582345 |
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| DOI: | 10.1109/TSM.2007.896632 |