مؤتمر
High Breakdown Voltage and Low Specific On-resistance C-doped GaN-on-sapphire HFETs for Low-loss and High-power Switching Applications
| العنوان: | High Breakdown Voltage and Low Specific On-resistance C-doped GaN-on-sapphire HFETs for Low-loss and High-power Switching Applications |
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| المؤلفون: | Choi, Y. C., Pophristic, M., Spencer, M. G., Eastman, L. F. |
| المصدر: | APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition Applied Power Electronics Conference, APEC 2007 - Twenty Second Annual IEEE. :1264-1267 Feb, 2007 |
| Relation: | APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 1424407133 9781424407132 |
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| تدمد: | 10482334 |
| DOI: | 10.1109/APEX.2007.357677 |