The Quantum Confined Stark Effect in Ge/SiGe Quantum Wells: An efficient electroabsorption mechanism for silicon-based applications

التفاصيل البيبلوغرافية
العنوان: The Quantum Confined Stark Effect in Ge/SiGe Quantum Wells: An efficient electroabsorption mechanism for silicon-based applications
المؤلفون: Roth, Jonathan E., Fidaner, Onur, Schaevitz, Rebecca K., Edwards, Elizabeth H., Kuo, Yu-Hsuan, Kamins, Theodore I., Harris, James S., Miller, David A. B.
المصدر: 2007 4th IEEE International Conference on Group IV Photonics Group IV Photonics, 2007 4th IEEE International Conference on. :1-3 Sep, 2007
Relation: 2007 4th IEEE International Conference on Group IV Photonics
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781424409341
9781424409358
تدمد:19492081
1949209X
DOI:10.1109/GROUP4.2007.4347709