دورية أكاديمية
Strained Si/SiGe Channel With Buried $\hbox{Si}_{0.99}\hbox{C}_{0.01}$ for Improved Drivability, Gate Stack Integrity and Noise Performance
| العنوان: | Strained Si/SiGe Channel With Buried $\hbox{Si}_{0.99}\hbox{C}_{0.01}$ for Improved Drivability, Gate Stack Integrity and Noise Performance |
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| المؤلفون: | Loh, W.-Y., Zang, H., Oh, H.-J., Choi, K.-J., Nguyen, H. S., Lo, G.-Q., Cho, B. J. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 54(12):3292-3298 Dec, 2007 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2007.908599 |