مؤتمر
Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention
| العنوان: | Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention |
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| المؤلفون: | Morikawa, T., Kurotsuchi, K., Kinoshita, M., Matsuzaki, N., Matsui, Y., Fujisaki, Y., Hanzawa, S., Kotabe, A., Terao, M., Moriya, H., Iwasaki, T., Matsuoka, M., Nitta, F., Moniwa, M., Koga, T., Takaura, N. |
| المصدر: | 2007 IEEE International Electron Devices Meeting Electron Devices Meeting, 2007. IEDM 2007. IEEE International. :307-310 Dec, 2007 |
| Relation: | 2007 IEEE International Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424415076 9781424415083 |
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| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2007.4418932 |