مؤتمر
A Dy2O3-capped HfO2 Dielectric and TaCx-based Metals Enabling Low-Vt Single-Metal-Single-Dielectric Gate Stack
| العنوان: | A Dy2O3-capped HfO2 Dielectric and TaCx-based Metals Enabling Low-Vt Single-Metal-Single-Dielectric Gate Stack |
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| المؤلفون: | Chang, V. S., Ragnarsson, L.-A., Pourtois, G., O'Connor, R., Adelmann, C., Van Elshocht, S., Delabie, A., Swerts, J., Van der Heyden, N., Conard, T., Cho, H.-J., Akheyar, A., Mitsuhashi, R., Witters, T., O'Sullivan, B. J., Pantisano, L., Rohr, E., Lehnen, P., Kubicek, S., Schram, T., De Gendt, S., Absil, P. P., Biesemans, S. |
| المصدر: | 2007 IEEE International Electron Devices Meeting Electron Devices Meeting, 2007. IEDM 2007. IEEE International. :535-538 Dec, 2007 |
| Relation: | 2007 IEEE International Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424415076 9781424415083 |
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| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2007.4418993 |