مؤتمر
SiGe BiCMOS Technology with 3.0 ps Gate Delay
| العنوان: | SiGe BiCMOS Technology with 3.0 ps Gate Delay |
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| المؤلفون: | Rucker, H., Heinemann, B., Barth, R., Bauer, J., Blum, K., Bolze, D., Drews, J., Fischer, G.G., Fox, A., Fursenko, O., Grabolla, T., Haak, U., Hoppner, W., Knoll, D., Kopke, K., Kuck, B., Mai, A., Marschmeyer, S., Morgenstern, T., Richter, H.H., Schley, P., Schmidt, D., Schulz, K., Tillack, B., Weidner, G., Winkler, W., Wolansky, D., Wulf, H.-E., Yamamototo, Y. |
| المصدر: | 2007 IEEE International Electron Devices Meeting Electron Devices Meeting, 2007. IEDM 2007. IEEE International. :651-654 Dec, 2007 |
| Relation: | 2007 IEEE International Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424415076 9781424415083 |
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| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2007.4419028 |