High Performance pMOSFETs Using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node

التفاصيل البيبلوغرافية
العنوان:	High Performance pMOSFETs Using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node
المؤلفون:	Suthram, S., Majhi, P., Sun, G., Kalra, P., Harris, H. R., Choi, K. J., Heh, D., Oh, J., Kelly, D., Choi, R., Cho, B.J., Hussain, M. M., Smith, C., Banerjee, S., Tsai, W., Thompson, S. E., Tseng, H. H., Jammy, R.
المصدر:	2007 IEEE International Electron Devices Meeting Electron Devices Meeting, 2007. IEDM 2007. IEEE International. :727-730 Dec, 2007
Relation:	2007 IEEE International Electron Devices Meeting
قاعدة البيانات:	IEEE Xplore Digital Library