مؤتمر
High Performance pMOSFETs Using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node
العنوان: | High Performance pMOSFETs Using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node |
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المؤلفون: | Suthram, S., Majhi, P., Sun, G., Kalra, P., Harris, H. R., Choi, K. J., Heh, D., Oh, J., Kelly, D., Choi, R., Cho, B.J., Hussain, M. M., Smith, C., Banerjee, S., Tsai, W., Thompson, S. E., Tseng, H. H., Jammy, R. |
المصدر: | 2007 IEEE International Electron Devices Meeting Electron Devices Meeting, 2007. IEDM 2007. IEEE International. :727-730 Dec, 2007 |
Relation: | 2007 IEEE International Electron Devices Meeting |
قاعدة البيانات: | IEEE Xplore Digital Library |
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