مؤتمر
Charge-gain program disturb mechanism in split-gate flash memory cell
| العنوان: | Charge-gain program disturb mechanism in split-gate flash memory cell |
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| المؤلفون: | Markov, V., Korablev, K., Kotov, A., Liu, X., Jia, Y.B., Dang, T.N., Levi, A. |
| المصدر: | 2007 IEEE International Integrated Reliability Workshop Final Report Integrated Reliability Workshop Final Report, 2007. IRW 2007. IEEE International. :43-47 Oct, 2007 |
| Relation: | 2007 IEEE International Integrated Reliability Workshop Final Report |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781509084593 |
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| تدمد: | 19308841 23748036 |
| DOI: | 10.1109/IRWS.2007.4469219 |