مؤتمر
Effect of End-of-Range Defects on Device Leakage in Direct Silicon Bonded (DSB) Technology
| العنوان: | Effect of End-of-Range Defects on Device Leakage in Direct Silicon Bonded (DSB) Technology |
|---|---|
| المؤلفون: | Yin, Haizhou, Hamaguchi, M., Saenger, K.L., Sung, C.Y., Hasumi, R., Ohuchi, K., Zhang, R., Cai, J., Ott, J.A., Chen, X., Luo, Z.J., Rovedo, N., Fogel, K., Pfeiffer, G., Kleinhenz, R., Sadana, D.K., Takayanagi, M., Ishimaru, K., Ning, T.H., Park, D.-G., Shahidi, G. |
| المصدر: | 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on. :34-35 Apr, 2008 |
| Relation: | 2008 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424416141 9781424416158 |
|---|---|
| تدمد: | 1524766X |
| DOI: | 10.1109/VTSA.2008.4530786 |