Scaling Properties of Doped Sb2Te Phase Change Line Cells

التفاصيل البيبلوغرافية
العنوان: Scaling Properties of Doped Sb2Te Phase Change Line Cells
المؤلفون: Jedema, F. J., in 't Zandt, M. A. A., Wolters, R. A. M., Tio Castro, D., Hurkx, G. A. M., Delhougne, R., Gravesteijn, D. J., Attenborough, K.
المصدر: 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint. :43-45 May, 2008
Relation: 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781424415465
9781424415472
تدمد:2159483X
21594864
DOI:10.1109/NVSMW.2008.18