مؤتمر
Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)
| العنوان: | Higher hole mobility induced by twisted Direct Silicon Bonding (DSB) |
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| المؤلفون: | Hamaguchi, M., Yin, H., Saenger, K. L., Sung, C. Y., Hasumi, R., Iijima, R., Ohuchi, K., Takasu, Y., Ott, J. A., Kang, H., Biscardi, M., Li, J., Domenicucci, A. G., Zhu, Z., Ronsheim, P., Zhang, R., Rovedo, N., Utomo, H., Fogel, K., de Souza, J.P., Sadana, D.K., Takayanagi, M., Park, D., Shahidi, G., Ishimaru, K. |
| المصدر: | 2008 Symposium on VLSI Technology VLSI Technology, 2008 Symposium on. :178-179 Jun, 2008 |
| Relation: | 2008 Symposium on VLSI Technology |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424418022 9781424418039 |
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| تدمد: | 07431562 21589682 |
| DOI: | 10.1109/VLSIT.2008.4588609 |